| 摘要: |
| 高热流密度、微型化芯片的发展使传统金属材料的热扩散能力受限。本文设计加工了一款具有微针筋的均温板，应用于芯片封装壳体，实验研究了充液率、芯片尺寸、散热器运行参数（水流量、温度）对均温板壳体（VC IHS）的传热性能影响，并与同工况条件下芯片封装金属铜壳体（Cu IHS）的传热性能进行对比。结果表明：VC IHS的充液率、芯片尺寸和散热器的运行参数会影响VC IHS的传热性能，在高热流密度同工况条件下，VC IHS的最佳充液率为90%，热阻随着散热器运行参数（水流量、温度）和芯片尺寸的增加而降低；当热流密度为200 W/cm2时,相比于Cu IHS，VC IHS的启动时间较短，均温性更佳，热阻和结温均小于Cu IHS，热阻减小20%。对于高热流密度、微型化芯片封装领域，均温板VC在高效散热、均温性方面更具应用前景，不同面积比下热阻比与热流密度的对应关系可为芯片封装VC IHS热设计提供参考。 |
| 关键词: 高热流密度 芯片封装 均温板 结温 均温性 |
| DOI： |
| 投稿时间：2021-06-24 修订日期：2021-09-09
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| 基金项目:江西省自然科学基金(20202BAB204022)和江西省科技厅重点研发计划(20192BBEL50032)资助。 |
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| Research on Heat Transfer Characteristics of Vapor Chamber Integrated Heat Spreader for Chip Package |
| Mao Chunlin,Liu Hanmin,Sun Jian,Zhou Xiaoxiang,Chen Zhipeng,Gao Bailing |
| (AVC Asia Vital Components Co., Ltd.;Jingdezhen Ceramic Institute) |
| Abstract: |
| The high heat flux and the development of miniaturized chips have restricted the thermal diffusion ability of traditional metal materials. In this study, a vapor chamber with a micro-pin was designed and used in an integrated heat spreader (IHS). The liquid filling rate, die size, and heat sink operating parameters (water flow rate and water temperature) affect the heat transfer performance of the vapor chamber (VC) IHS compared with a Cu IHS under the same working conditions. The experimental results show that the filling rate of the VC IHS, die size, and operating parameters of the heat sink will affect the heat transfer performance. Under the conditions of high heat flux and the same working conditions, the optimal filling rate of the VC IHS was 90%. The thermal resistance decreased with an increase in the heat sink parameters and die size. When the heat flux was 200 W/cm2, the VC IHS had a shorter start-up time and better temperature uniformity. Its thermal resistance and junction temperature are both lower than those of a Cu IHS, and the thermal resistance is reduced by 20%. In the field of high heat flux and miniaturized chip packaging, the VC has better application prospects in terms of efficient heat dissipation and temperature uniformity. The corresponding relationship between the thermal resistance ratio and the heat flux under different area ratios provides references for the chip packaging VC IHS thermal design. |
| Key words: high heat flux density chip packaging vapor chamber junction temperature temperature uniformity |
